Numerical study of the turnoff behavior of high-voltage 4H-SiC IGBTs

被引：16
|
作者：
Tamaki, Tomohiro [1 ,2 ]
Walden, Ginger G. [2 ,3 ]
Sui, Yang [2 ,3 ]
Cooper, James A. [2 ,3 ]
机构：
[1] Renesas Technol Corp, Takasaki, Gunma 3700021, Japan
[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
[3] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 08期
关键词：
IGBT; turnoff; 4H-SiC;
D O I：
10.1109/TED.2008.926965
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The turnoff behavior of high-voltage 4H-SiC p-channel insulated gate bipolar transistors is investigated by 2-D numerical simulations. Minority carrier lifetime in the nonpunchthrough buffer layer is found to be the major factor determining switching
引用
收藏
页码：1928 / 1933
页数：6
相关论文
共 50 条
  • [1] A simulation study of high voltage 4H-SiC IGBTs
    Wang, J
    Williams, BW
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (07) : 806 - 815
  • [2] Design and characterization of high-voltage 4H-SiC p-IGBTs
    Zhang, Qingchun
    Wang, Jun
    Jonas, Charlotte
    Callanan, Robert
    Sumakeris, Joseph J.
    Ryu, Sei-Hyung
    Das, Mrinal
    Agarwal, Anant
    Palmour, John
    Huang, Alex Q.
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (08) : 1912 - 1919
  • [3] Ultra High Voltage IGBTs in 4H-SiC
    Ryu, S.
    Capell, C.
    Jonas, C.
    Lemma, Y.
    O'Loughlin, M.
    Clayton, J.
    Van Brunt, E.
    Lam, K.
    Richmond, J.
    Burk, A.
    Grider, D.
    Allen, S.
    Palmour, J.
    Agarwal, A.
    Kadavelugu, A.
    Bhattacharya, S.
    [J]. 2013 1ST IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2013, : 36 - 39
  • [4] Experimental Demonstration of High-Voltage 4H-SiC Bi-Directional IGBTs
    Chowdhury, Sauvik
    Hitchcock, Collin
    Stum, Zachary
    Dahal, Rajendra P.
    Bhat, Ishwara B.
    Chow, T. Paul
    [J]. IEEE ELECTRON DEVICE LETTERS, 2016, 37 (08) : 1033 - 1036
  • [5] Design and fabrications of high voltage IGBTs on 4H-SiC
    Zhang, Qingchun
    Jonas, Charlotte
    Ryu, Sei-Hyung
    Agarwal, Anant
    Palmour, John
    [J]. PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2006, : 285 - +
  • [6] High Performance, Ultra High Voltage 4H-SiC IGBTs
    Ryu, Sei-Hyung
    Capell, Craig
    Cheng, Lin
    Jonas, Charlotte
    Gupta, Anand
    Donofrio, Matt
    Clayton, Jack
    O'Loughlin, Michael
    Burk, Al
    Grider, David
    Agarwal, Anant
    Palmour, John
    Hefner, Allen
    Bhattacharya, Subhashish
    [J]. 2012 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2012, : 3603 - 3608
  • [7] High Voltage 4H-SiC Bi-Directional IGBTs
    Chowdhury, S.
    Hitchcock, C.
    Dahal, R.
    Bhat, I. B.
    Chow, T. P.
    [J]. 2016 28TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2016, : 463 - 466
  • [8] Operating Principles, Design Considerations, and Experimental Characteristics of High-Voltage 4H-SiC Bidirectional IGBTs
    Chowdhury, Sauvik
    Hitchcock, Collin W.
    Stum, Zachary
    Dahal, Rajendra P.
    Bhat, Ishwara B.
    Chow, T. Paul
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (03) : 888 - 896
  • [9] High-Voltage n-Channel IGBTs on Free-Standing 4H-SiC Epilayers
    Wang, Xiaokun
    Cooper, James A.
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (02) : 511 - 515
  • [10] Numerical and experimental study of the mesa configuration in high-voltage 4H-SiC PiN rectifiers
    Deng, Xiao-Chuan
    Chen, Xi-Xi
    Li, Cheng-Zhan
    Shen, Hua-Jun
    Zhang, Jin-Ping
    [J]. CHINESE PHYSICS B, 2016, 25 (08)
12345