Investigation of sub-surface damage during sliding wear of alumina using focused ion-beam milling

被引:24
|
作者
Chaiwan, S [1 ]
Hoffman, M
Munroe, P
Stiefel, U
机构
[1] Univ New S Wales, Sch Mat Sci & Engn, Sydney, NSW, Australia
[2] Tech Univ Darmstadt, Darmstadt, Germany
关键词
mild wear; alumina; sub-surface damage; focused ion beam;
D O I
10.1016/S0043-1648(01)00898-5
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
In this work contact pressure and sliding distance-induced changes in wear rate and mechanism, and friction behaviour of alumina are investigated by consideration of sub-surface damage. Sub-surface cracking and the formation of tribochemical reaction products are observed through the use of a novel sectioning technique; focused ion-beam milling. Initially wear rate experiments with three different grain sizes and different contact loads were undertaken. These were followed by extensive sub-surface microscopic investigations. Wear experiments, undertaken on a pin-on-disc tribometer over a range of contact pressures, revealed that wear mechanisms changed as contact pressure decreased. Both wear rate and friction were monitored. Debris and surface layers which formed were characterised using X-ray photoelectron spectroscopy (XPS). This identified an oxide/hydroxide layer which formed during wear and which was found to significantly affect friction. The nature of this layer varied significantly with contact pressure and sliding distance. It was found that mild wear of alumina in air involves the continual formation and removal of a surface layer at differing rates. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:531 / 539
页数:9
相关论文
共 50 条
  • [31] ANTENNA PROPERTIES OF THIN-FILM WARM-CARRIER DEVICES FABRICATED BY USING FOCUSED ION-BEAM MILLING
    YASUOKA, Y
    HARAKAWA, K
    GAMO, K
    NAMBA, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (03): : 906 - 909
  • [32] SUB-MU-M WIDE CHANNELS WITH SURFACE-POTENTIAL COMPENSATED BY FOCUSED SI ION-BEAM IMPLANTATION
    FUJISAWA, T
    SAKU, T
    HIRAYAMA, Y
    TARUCHA, S
    APPLIED PHYSICS LETTERS, 1993, 63 (01) : 51 - 53
  • [33] MOLECULAR ION-BEAM DAMAGE OF SELF-ASSEMBLED MONOLAYERS DURING SURFACE-INDUCED DISSOCIATION
    BURROUGHS, JA
    WAINHAUS, SB
    HANLEY, L
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1994, 207 : 123 - COLL
  • [34] Residual stress measurement in thin films at sub-micron scale using Focused Ion Beam milling and imaging
    Song, Xu
    Yeap, Kong Boon
    Zhu, Jing
    Belnoue, Jonathan
    Sebastiani, Marco
    Bemporad, Edoardo
    Zeng, Kaiyang
    Korsunsky, Alexander M.
    THIN SOLID FILMS, 2012, 520 (06) : 2073 - 2076
  • [35] SUB-0.2-MU-M LITHOGRAPHY BY USING A VARIABLE-SHAPED ELECTRON-BEAM ASSISTED BY A FOCUSED ION-BEAM PROCESS
    HOSONO, K
    MINAMI, H
    KUSUNOSE, H
    FUJINO, T
    NAGAHAMA, K
    MORIMOTO, H
    WATAKABE, Y
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 2044 - 2047
  • [36] INVESTIGATION OF INTERACTION BETWEEN ION-BEAM PLASMA AND PROCESSED SURFACE DURING THE SYNTHESIS OF TANTALUM DIBORIDE AND PENTAOXIDE
    Yakovin, S.
    Zykov, A.
    Dudin, S.
    Dakhov, A.
    Yefymenko, N.
    PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY, 2019, (01): : 229 - 232
  • [37] FABRICATION OF SUB-100-NM WIRES AND DOTS IN GAAS/ALGAAS MULTIQUANTUM WELL USING FOCUSED ION-BEAM LITHOGRAPHY
    KITADA, H
    ARIMOTO, H
    TACKEUCHI, A
    YAMAGUCHI, Y
    NAKATA, Y
    ENDOH, A
    MUTO, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (7B): : L990 - L991
  • [38] Assessment of surface damage and sidewall implantation in AlGaN-based high electron mobility transistor devices caused during focused-ion-beam milling
    Cullen, David A.
    Smith, David J.
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (09)
  • [39] Reduction of electrical damage in specimens prepared using focused ion beam milling for dopant profiling using off-axis electron holography
    Cooper, David
    Truche, Robert
    Rouviere, Jean-Luc
    ULTRAMICROSCOPY, 2008, 108 (05) : 488 - 493
  • [40] Deformation during surface modification of silicon carbide using rare-gas ion-beam irradiation
    Nogami, S
    Ohtsuka, S
    Toloczko, MB
    Hasegawa, A
    Abe, K
    PRICM 4: FORTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, VOLS I AND II, 2001, : 1367 - 1370