Characterization of ferroelectric thin-film planar microwave devices using the Method of Line (MoL)

被引：0
|
作者：
Giraud, S. [1 ]
Courreges, S. [1 ]
Cros, D. [1 ]
Madrangeas, V. [1 ]
机构：
[1] IRCOM, UMR 6615, F-87060 Limoges, France
来源：
35th European Microwave Conference, Vols 1-3, Conference Proceedings | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The characterization of ferroelectric thin-film planar microwave devices using the Method of Line (MoL) has been summarized in this paper. Because the permittivity-de electric field dependence in ferroelectric materials is used to tune microwave devices, it is necessary to develop a suitable analysis method to accurately characterize ferroelectric materials. This paper presents first results of 2D analysis of tunable planar devices.
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页码：513 / 516
页数：4
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