Characterization of ferroelectric thin-film planar microwave devices using the Method of Line (MoL)

被引:0
|
作者
Giraud, S. [1 ]
Courreges, S. [1 ]
Cros, D. [1 ]
Madrangeas, V. [1 ]
机构
[1] IRCOM, UMR 6615, F-87060 Limoges, France
来源
35th European Microwave Conference, Vols 1-3, Conference Proceedings | 2005年
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The characterization of ferroelectric thin-film planar microwave devices using the Method of Line (MoL) has been summarized in this paper. Because the permittivity-de electric field dependence in ferroelectric materials is used to tune microwave devices, it is necessary to develop a suitable analysis method to accurately characterize ferroelectric materials. This paper presents first results of 2D analysis of tunable planar devices.
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页码:513 / 516
页数:4
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