Photoluminescence excitation and deexcitation mechanism of erbium doped silicon monoxide

被引：0
|
作者：
Roberts, SW
Parker, GJ
机构：
[1] Dept. of Electronics and Comp. Sci., Mountbatten Building, The University
来源：
ELECTRONICS LETTERS | 1996年 / 32卷 / 06期
关键词：
photoluminescence;
D O I：
10.1049/el:19960404
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The excitation of photoluminescence in erbium doped silicon monoxide is shown to be possible over a continuous pumping spectrum and the decay lifetimes are found to decrease with increasing temperature. These experimental results are explained in the context of a possible indirect pumping mechanism and a back-transfer mechanism, both demonstrating the coupling of the Er3+ ions to the SiO electronic bands.
引用
收藏
页码：589 / 591
页数：3
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