Photoluminescence excitation and deexcitation mechanism of erbium doped silicon monoxide

被引：0
|
作者：
Roberts, SW
Parker, GJ
机构：
[1] Dept. of Electronics and Comp. Sci., Mountbatten Building, The University
来源：
ELECTRONICS LETTERS | 1996年 / 32卷 / 06期
关键词：
photoluminescence;
D O I：
10.1049/el:19960404
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The excitation of photoluminescence in erbium doped silicon monoxide is shown to be possible over a continuous pumping spectrum and the decay lifetimes are found to decrease with increasing temperature. These experimental results are explained in the context of a possible indirect pumping mechanism and a back-transfer mechanism, both demonstrating the coupling of the Er3+ ions to the SiO electronic bands.
引用
收藏
页码：589 / 591
页数：3
相关论文
共 50 条
  • [21] Exciton mechanism of erbium ion excitation in silicon
    Bresler, MS
    Gusev, OB
    Zakharchenya, BP
    Yassievich, IN
    FIZIKA TVERDOGO TELA, 1996, 38 (05): : 1474 - 1482
  • [22] Mechanism of excitation of erbium electroluminescence in amorphous silicon
    Bresler, MS
    Fuhs, W
    Gregorkiewicz, T
    Gusev, OB
    Pak, PE
    Terukov, EI
    Tsendin, KD
    Yassievich, IN
    PHYSICA B-CONDENSED MATTER, 1999, 273-4 : 354 - 357
  • [23] Nanocluster sensitized erbium-doped silicon monoxide waveguides
    Clement, T. J.
    DeCorby, R. G.
    Ponnampalam, N.
    Allen, T. W.
    Hryciw, A.
    Meldrum, A.
    OPTICS EXPRESS, 2006, 14 (25) : 12151 - 12162
  • [24] Photoluminescence of erbium in amorphous hydrogenated phosphorus-doped silicon
    E. I. Terukov
    A. N. Kuznetsov
    E. O. Parshin
    G. Weiser
    H. Kuehne
    Semiconductors, 1997, 31 : 738 - 739
  • [25] Photoluminescence in erbium doped amorphous silicon oxycarbide thin films
    Gallis, S
    Huang, MB
    Efstathiadis, H
    Eisenbraun, E
    Kaloyeros, AE
    Nyein, EE
    Hommerich, U
    APPLIED PHYSICS LETTERS, 2005, 87 (09)
  • [26] Photoluminescence of porous silicon stain etched and doped with erbium and ytterbium
    Diaz-Herrera, B.
    Gonzalez-Diaz, B.
    Guerrero-Lemus, R.
    Hernandez-Rodriguez, C.
    Mendez-Ramos, J.
    Rodriguez, V. D.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2009, 41 (04): : 525 - 528
  • [27] Visible and IR photoluminescence of erbium doped porous silicon films
    Filippov, VV
    Pershukevich, PP
    Homenko, VS
    Balucani, M
    Bondarenko, VP
    La Monica, S
    Maiello, G
    Masini, G
    Ferrari, A
    SOLID STATE PHENOMENA, 1997, 54 : 94 - 98
  • [28] Photoluminescence of erbium in amorphous hydrogenated phosphorus-doped silicon
    Terukov, EI
    Kuznetsov, AN
    Parshin, EO
    Weiser, G
    Kuehne, H
    SEMICONDUCTORS, 1997, 31 (07) : 738 - 739
  • [29] Mechanism of the subband excitation of photoluminescence from erbium ions in silicon under high-intensity optical pumping
    A. N. Yablonskiy
    B. A. Andreev
    D. I. Kryzhkov
    V. P. Kuznetsov
    D. V. Shengurov
    Z. F. Krasilnik
    Semiconductors, 2012, 46 : 1407 - 1410
  • [30] ERBIUM IN OXYGEN-DOPED SILICON - OPTICAL-EXCITATION
    VANDENHOVEN, GN
    SHIN, JH
    POLMAN, A
    LOMBARDO, S
    CAMPISANO, SU
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (04) : 2642 - 2650
12345