Theoretical,and experimental study on junction temperature of packaged Fabry-Perot laser diode

被引：15
|
作者：
Han, JH [1 ]
Park, SW [1 ]
机构：
[1] LG Cable, Fiber Opt & Telecommun Res Lab, Anyang 431080, South Korea
来源：
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2004年 / 4卷 / 02期
关键词：
laser reliability; laser thermal factors; semiconductor device packaging; semiconductor lasers;
D O I：
10.1109/TDMR.2004.827834
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Characterization of laser diode at high temperature for the issue of long-term reliability to detect and screen the initial failures originated from internal stress and optical instability is performed. Estimation of junction temperature of 1.55 mum Fabry-Perot laser diode was theoretically approached by using thermal resistance of materials regarding the heat path from analytically modeling laser diode. Under the condition of burn-in test, experiments measuring the junction temperature with current injection at controlled temperature verify the result compared to that of analysis.
引用
收藏
页码：292 / 294
页数：3
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