10.3 W diode-pumped passively mode-locked Nd: YAG laser at 1319 nm with a semiconductor saturable absorber mirror

被引：4

作者：

Li, Long-Pu ^{[1
,2
,3
]}

Li, Yu-Jiao ^{[1
,2
,3
]}

Song, Yan-Jie ^{[1
,2
,3
]}

Tu, Wei ^{[2
]}

Zong, Nan ^{[2
]}

Zhang, Shen-Jin ^{[2
]}

Wang, Zhi-Min ^{[2
]}

Bo, Yong ^{[1
,2
]}

Peng, Qin-Jun ^{[1
]}

Xu, Zu-Yan ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, TIPC, Key Lab Solid State Laser, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Funct Crystals & Laser Technol, Beijing 100190, Peoples R China

[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

LASER PHYSICS | 2019年 / 29卷 / 09期

基金：

中国国家自然科学基金;

关键词：

mode-locking; ultrafast laser; saturable absorber; HIGH-POWER; NDGDVO4; LASER; GENERATION; QUALITY; NDYVO4;

D O I：

10.1088/1555-6611/ab3450

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A high-power diode-end-pumped continuous-wave (CW) passively mode-locked picosecond (ps) 1319 nm Nd: YAG laser was demonstrated with a semiconductor saturable absorber mirror (SESAM). The oscillator cavity was accurately designed to optimize the laser beam radii in the centre of crystal and on the SESAM. At an absorbed pump power of 102 W, the maximum mode-locked output power of 10.3 W was achieved with pulse width of 27.1 ps and a beam quality factor M-2 = 1.38 at the repetition rate of 76 MHz, corresponding to an optical-optical efficiency of 10.1%. To the best of our knowledge, this is the first demonstration of diode-pumped passively CW mode-locked ps Nd: YAG laser at 1319 nm with a SESAM.

引用

页数：5

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