Diode-end-pumped passively mode-locked Nd:GGG laser with a semiconductor saturable mirror

被引：32
|
作者：
Qin, L. J. [1 ]
Tang, D. Y. [2 ]
Xie, G. Q. [2 ]
Luo, H. [2 ]
Dong, C. M. [3 ]
Jia, Z. T. [3 ]
Yu, H. H. [3 ]
Tao, X. T. [3 ]
机构：
[1] Yantai Univ, Sch Environm & Mat Engn, Yantai 264005, Peoples R China
[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[3] Shandong Univ, Natl Lab Crystal Mat, Jinan 250100, Peoples R China
来源：
OPTICS COMMUNICATIONS | 2008年 / 281卷 / 18期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1016/j.optcom.2008.06.011
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report on the passive mode-locking of a diode-end-pumped neodymium-doped gadolinium gallium garnet (Nd:GGG) crystal with a semiconductor saturable absorber mirror (SESAM). Continuous wave (CW) mode-locking was obtained. The mode-locked pulse duration was estimated to be similar to 17.5 ps with a maximum average output power of 0.4 W. The mode-locked pulses have a repetition rate of 121.5 MHz. To our knowledge, this is the first demonstration of passive mode-locking of the diode pumped Nd:GGG lasers. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：4762 / 4764
页数：3
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