Passively mode-locked Nd:GGG laser with a semiconductor saturable absorber mirror

被引：1
|
作者：
Zhang, B. Y. [1 ,2 ]
Xu, J. L. [1 ]
Wang, G. J. [2 ]
He, J. L. [1 ]
Wang, W. J. [2 ]
Zhang, Q. L. [3 ]
Sun, D. L. [3 ]
Luo, J. Q. [3 ]
Yin, S. T. [3 ]
机构：
[1] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
[2] Liaocheng Univ, Coll Phys Sci & Informat Engn, Liaocheng 252059, Peoples R China
[3] Chinese Acad Sci, Key Lab Photon Devices & Mat Anhui, Anhui Inst Opt & Fine Mech, Hefei 230031, Peoples R China
来源：
LASER PHYSICS | 2012年 / 22卷 / 04期
基金：
中国国家自然科学基金;
关键词：
MU-M; CONTINUOUS-WAVE; ND/GAGG LASER; NDGGG LASER; NM; GGG; WAVELENGTH; OPERATION; CRYSTAL; LOCKING;
D O I：
10.1134/S1054660X12040317
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The mode-locking operation of the Nd:GGG crystal with a semiconductor saturable absorber mirror (SESAM) was demonstrated. Continuous wave (CW) mode-locking was obtained with the pulse duration of 11 ps and the pulse repetition rate of 40.38 MHz. At 7 W of pump power, the maximum average output power of 1.1 W was obtained with the slope efficiency of 18.1%.
引用
收藏
页码：699 / 702
页数：4
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