Study of magnetization reversal in submicron wires using the giant magnetoresistance effect

被引:1
|
作者
Shinjo, T [1 ]
机构
[1] Kyoto Univ, Inst Chem Res, Kyoto 6110011, Japan
关键词
D O I
10.1080/13642810008208609
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Magnetization reversal phenomena in submicron magnetic wire systems were investigated from magnetoresistance measurements. Wire arrays and also single wire samples consisting of two magnetic layers with different coercivities were prepared and the resistivity was measured by applying external magnetic fields. Owing to the non-coupled type of giant magnetoresistance effect, the resistivity of wires is enhanced in proportion to the relative area of antiparallel magnetization. It is demonstrated that the resistivity measurements can sensitively detect the magnetization reversal phenomena in submicron wires. The dynamic properties of domain walls in wire samples are studied and the velocity of domain wall propagation is estimated.
引用
收藏
页码:207 / 214
页数:8
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