Studies on magnetization reversal in submicron wires and domain wall behaviors

被引：0
|
作者：
Shinjo, T [1 ]
Shigeto, K
Nagahama, T
Mibu, K
Ono, T
机构：
[1] Kyoto Univ, Inst Chem Res, Kyoto 6110011, Japan
[2] Keio Univ, Fac Sci & Technol, Yokohama, Kanagawa 2238852, Japan
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2000年 / 69卷
关键词：
microfabrication; submicron wires; GMR (giant magnetoresistance effect); magnetization reversal; domain wall propagation; domain wall resistance;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Several recent experimental studies on microstructured samples of ferromagnetic materials are described. Magnetization reversal phenomena were investigated on submicron wire samples consisting of two magnetic layers with different coercivities utilizing the giant magnetoresistance (GMR) effect. From resistivity measurements, the domain wall movements are sensitively monitored and the velocity of propagation is determined. Experiments to estimate the contribution of domain wall to the resistivity are also introduced.
引用
收藏
页码：91 / 98
页数：8
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