Intersubband absorption at λ ∼ 1.2-1.6 μm in GaN/AlN multiple quantum wells grown by rf-plasma molecular beam epitaxy

被引：0

作者：

Kishino, K ^{[1
]}

Kikuchi, A ^{[1
]}

Kanazawa, H ^{[1
]}

Tachibana, T ^{[1
]}

机构：

[1] Sophia Univ, Dept Elect & Elect Engn, Chiyoda Ku, Tokyo 1028554, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2002年 / 192卷 / 01期

关键词：

D O I：

10.1002/1521-396X(200207)192:1<124::AID-PSSA124>3.0.CO;2-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In order to investigate the intersubband transition (ISBT), GaN/AlN multiple quantum wells with 90 GaN wells were prepared directly on (0001) sapphire substrates by rf-plasma molecular beam epitaxy. The thickness of GaN well and AlN barrier were 4-8 monolayers (ML) and similar to11 ML, respectively. One ML corresponds to around 2.6 Angstrom. ISBT absorptions at 1.15-1.55 mum in wavelength, which covers the whole communication wavelength, were measured, and 1.15 mum is the shortest record in ISBT-wavelength.

引用

页码：124 / 128

页数：5

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