A 10-kV SiC-MOSFET (Gen-3) Half-Bridge Module-Based Isolated Bidirectional DC-DC Converter Block for Medium-Voltage High-Power Applications

The packaging technology for the medium-voltage silicon carbide (SiC)-metal oxide semiconductor field-effect transistor (MOSFETs) has come a long way since its inception. Now, it is feasible to design half-bridge power modules based on 10-kV SiC-MOSFETs for higher current applications. This paves the way for many application areas for these devices, particularly for medium-voltage and high-power applications. This paper presents a design of a modular medium-voltage, high-power isolated DC-DC converter enabled by these 10-kV SiC-MOSFETs-based power modules. The design objectives are targeted at increasing the efficiency, power density, and interoperability. The proposed DC-DC converter is aimed for applications like DC distribution for the data centers, subsea power transmission, offshore wind farms, and photovoltaic energy transmission-distribution-coordination; electric ship DC power transmission; solid-state distribution transformer, etc. (c) 2020 Institute of Electrical Engineers of Japan. Published by Wiley Periodicals LLC.