Power Loss Evaluation for SiC MOSFET-Based Isolated Bidirectional Dual Active Bridge DC-DC Converter

Efficiency is one of the most important parameters to evaluate the performance of power electronic converters. This paper proposes a power loss evaluation model for silicon-carbide MOSFET which is based on a dual active bridge converter. Both power losses of silicon-carbide MOSFET and its free-wheeling silicon-carbide Schottky diode are taken into account in this model, especially the switching time of the silicon-carbide MOSFET is calculated accurately to estimate the switching loss. To validate the power loss evaluation model, a 10 kW dual active bridge prototype is designed and tested under different operation points to compare with the theoretical quantitative power loss evaluation results.