A 10-kV SiC-MOSFET (Gen-3) Half-Bridge Module-Based Isolated Bidirectional DC-DC Converter Block for Medium-Voltage High-Power Applications

被引：3

作者：

Acharya, Sayan ^{[1
]}

Anurag, Anup ^{[2
]}

Chattopadhyay, Ritwik ^{[2
]}

Rengarajan, Satish ^{[2
]}

Prabowo, Yos ^{[2
]}

Bhattacharya, Subhashish ^{[2
]}

机构：

[1] ABB US Corp Res Ctr, Raleigh, NC 27606 USA

[2] North Carolina State Univ, FREEDM Syst Ctr, Dept ECE, Raleigh, NC USA

来源：

IEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING | 2021年 / 16卷 / 01期

关键词：

SiC‐ MOSFETs; dual active bridge; high‐ frequency transformer; wide‐ bandgap (WBG) devices;

D O I：

10.1002/tee.23275

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The packaging technology for the medium-voltage silicon carbide (SiC)-metal oxide semiconductor field-effect transistor (MOSFETs) has come a long way since its inception. Now, it is feasible to design half-bridge power modules based on 10-kV SiC-MOSFETs for higher current applications. This paves the way for many application areas for these devices, particularly for medium-voltage and high-power applications. This paper presents a design of a modular medium-voltage, high-power isolated DC-DC converter enabled by these 10-kV SiC-MOSFETs-based power modules. The design objectives are targeted at increasing the efficiency, power density, and interoperability. The proposed DC-DC converter is aimed for applications like DC distribution for the data centers, subsea power transmission, offshore wind farms, and photovoltaic energy transmission-distribution-coordination; electric ship DC power transmission; solid-state distribution transformer, etc. (c) 2020 Institute of Electrical Engineers of Japan. Published by Wiley Periodicals LLC.

引用

页码：127 / 138

页数：12

共 22 条

[21] 1 kV, 10-kW SiC-Based Quadruple Active Bridge DCX Stage in a DC to Three-Phase AC Module for Medium-Voltage Grid Integration
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Mukherjee, Satyaki
Martin, Trent
Mallik, Rahul
Dutta, Soham
Seo, Gab-Su
Johnson, Brian
Maksimovic, Dragan
[J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2022, 37 (12) : 14631 - 14646
[22] Design Comparison of High-Power Medium-Voltage Converters Based on a 6.5-kV Si-IGBT/Si-PiN Diode, a 6.5-kV Si-IGBT/SiC-JBS Diode, and a 10-kV SiC-MOSPET/SiC-JBS Diode
Mirzaee, Hesam
De, Ankan
Tripathi, Awneesh
Bhattacharya, Subhashish
[J]. IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2014, 50 (04) : 2728 - 2740

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