Surfactant effect of Mn on the formation of self-organized InAs nanostructures

被引：12
|
作者：
Guo, SP [1 ]
Shen, A [1 ]
Yasuda, H [1 ]
Ohno, Y [1 ]
Matsukura, F [1 ]
Ohno, H [1 ]
机构：
[1] Tohoku Univ, Res Inst Elect Commun, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2000年 / 208卷 / 1-4期
基金：
日本学术振兴会;
关键词：
InAs; self-organized nanostructure; Mn surfactant;
D O I：
10.1016/S0022-0248(99)00465-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The effect of Mn as a surfactant on the formation of InAs nanostructures was studied. The shape of the nanostructures changed drastically when a layer of Mn was added on the growth front before InAs growth. When 6 ML2 (1) (1) (6 monolayers in (2 1 1) plane) of InAs was grown on GaAs (2 1 1)B with an initial Mn coverage of 0.5 ML, quantum wire-like structures (QWRs) were formed at growth temperatures ranging from 450 to 510 degrees C, With the same initial coverage of Mn, two kinds of nanostructures, quantum dashes (QDHs) and quantum dots (QDs) were formed at 400 or 425 degrees C, whereas only QDs resulted at 380 degrees C. Nanostructures on (1 0 0) and (3 1 1)B surfaces were also investigated and compared. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：799 / 803
页数：5
相关论文
共 50 条
  • [21] Photoconductivity in self-organized InAs quantum dots
    Natl Taiwan Univ, Taipei, Taiwan
    [J]. J Appl Phys, 9 (5351-5353):
  • [22] Photoconductivity in self-organized InAs quantum dots
    Fan, JC
    Lin, YJ
    Chen, YF
    Chen, MC
    Lin, HH
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 84 (09) : 5351 - 5353
  • [23] Si doping effect on self-organized InAs/GaAs quantum dots
    Qian, Zhao
    Songlin, Feng
    Dong, Ning
    Haijun, Zhu
    Zhiming, Wang
    Yuanming, Deng
    [J]. Journal of Crystal Growth, 1999, 200 (03): : 603 - 607
  • [24] Quantum size effect in self-organized InAs/GaAs quantum dots
    Heitz, R
    Stier, O
    Mukhametzhanov, I
    Madhukar, A
    Bimberg, D
    [J]. PHYSICAL REVIEW B, 2000, 62 (16) : 11017 - 11028
  • [25] Effect of dopant Si on the uniformity of self-organized InAs quantum dots
    Wang, Hailong
    Zhu, Haijun
    Li, Qing
    Ning, Dong
    Wang, Hui
    Wang, Xiaodong
    Deng, Yuanming
    Feng, Songlin
    [J]. Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves, 1999, 18 (06): : 423 - 426
  • [26] Si doping effect on self-organized InAs/GaAs quantum dots
    Zhao, Q
    Feng, SL
    Ning, D
    Zhu, HJ
    Wang, ZM
    Deng, YM
    [J]. JOURNAL OF CRYSTAL GROWTH, 1999, 200 (3-4) : 603 - 607
  • [27] Effect of matrix on InAs self-organized quantum dots on InP substrate
    Ustinov, VM
    Weber, ER
    Ruvimov, S
    Liliental-Weber, Z
    Zhukov, AE
    Egorov, AY
    Kovsh, AR
    Tsatsul'nikov, AF
    Kop'ev, PS
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (03) : 362 - 364
  • [28] The effect of dopant Si on the uniformity of self-organized InAs quantum dots
    Wang, HL
    Zhu, HJ
    Li, Q
    Ning, D
    Wang, H
    Wang, XD
    Deng, YM
    Feng, SL
    [J]. JOURNAL OF INFRARED AND MILLIMETER WAVES, 1999, 18 (06) : 423 - 426
  • [29] Photoluminescence of InAs Self-Organized Quantum Dots Formation on InP Substrate by MOCVD
    Benzhong Wang
    Zhi Jin
    Fanghai Zhao
    Yuhen Peng
    Zhengting Li
    Shiyong Liu
    [J]. Optical and Quantum Electronics, 1998, 30 : 187 - 192
  • [30] Photoluminescence of InAs self-organized quantum dots formation on InP substrate by MOCVD
    Wang, BZ
    Jin, Z
    Zhao, FH
    Peng, YH
    Li, ZT
    Liu, SY
    [J]. OPTICAL AND QUANTUM ELECTRONICS, 1998, 30 (03) : 187 - 192
12345