Surfactant effect of Mn on the formation of self-organized InAs nanostructures

被引：12
|
作者：
Guo, SP [1 ]
Shen, A [1 ]
Yasuda, H [1 ]
Ohno, Y [1 ]
Matsukura, F [1 ]
Ohno, H [1 ]
机构：
[1] Tohoku Univ, Res Inst Elect Commun, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2000年 / 208卷 / 1-4期
基金：
日本学术振兴会;
关键词：
InAs; self-organized nanostructure; Mn surfactant;
D O I：
10.1016/S0022-0248(99)00465-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The effect of Mn as a surfactant on the formation of InAs nanostructures was studied. The shape of the nanostructures changed drastically when a layer of Mn was added on the growth front before InAs growth. When 6 ML2 (1) (1) (6 monolayers in (2 1 1) plane) of InAs was grown on GaAs (2 1 1)B with an initial Mn coverage of 0.5 ML, quantum wire-like structures (QWRs) were formed at growth temperatures ranging from 450 to 510 degrees C, With the same initial coverage of Mn, two kinds of nanostructures, quantum dashes (QDHs) and quantum dots (QDs) were formed at 400 or 425 degrees C, whereas only QDs resulted at 380 degrees C. Nanostructures on (1 0 0) and (3 1 1)B surfaces were also investigated and compared. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：799 / 803
页数：5
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