Intraband spectroscopy of self-organized InAs/InAlAs nanostructures grown on InP(001)

被引：5
|
作者：
Fossard, F [1 ]
Helman, A
Julien, FH
Gendry, M
Brault, J
Péronne, E
Alexandrou, A
Schacham, SE
Finkman, E
机构：
[1] Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France
[2] Ecole Cent Lyon, CNRS, UMR 5512, Lab Elect,LEOM, F-69131 Ecully, France
[3] Ecole Polytech, ENSTA, CNRS, UMR 7639,Lab Opt Appl, F-91761 Palaiseau, France
[4] Coll Judea & Samaria, Dept Elect & Elect Engn, IL-44837 Ariel, Israel
[5] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel
[6] Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 17卷 / 1-4期
关键词：
III-V semiconductors; quantum wires; quantum dots; intraband transitions;
D O I：
10.1016/S1386-9477(02)00779-8
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
InAs nanostructures on InAlAs/InP(001) have been fabricated using Stranski-Krastanov growth mode. Depending on growth conditions, a full coverage of the InAlAs surface by either InAs strings of elongated dots or isolated dots can be achieved. Giant intraband absorptions are observed at mid-infrared wavelengths in both nanostructures. The intraband resonances are strongly polarized in the layer plane as a consequence of the quantum confinement along either [110] and [1 - 10] directions. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：82 / 83
页数：2
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