Intraband spectroscopy of self-organized InAs/InAlAs nanostructures grown on InP(001)

被引:5
|
作者
Fossard, F [1 ]
Helman, A
Julien, FH
Gendry, M
Brault, J
Péronne, E
Alexandrou, A
Schacham, SE
Finkman, E
机构
[1] Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France
[2] Ecole Cent Lyon, CNRS, UMR 5512, Lab Elect,LEOM, F-69131 Ecully, France
[3] Ecole Polytech, ENSTA, CNRS, UMR 7639,Lab Opt Appl, F-91761 Palaiseau, France
[4] Coll Judea & Samaria, Dept Elect & Elect Engn, IL-44837 Ariel, Israel
[5] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel
[6] Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel
来源
关键词
III-V semiconductors; quantum wires; quantum dots; intraband transitions;
D O I
10.1016/S1386-9477(02)00779-8
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
InAs nanostructures on InAlAs/InP(001) have been fabricated using Stranski-Krastanov growth mode. Depending on growth conditions, a full coverage of the InAlAs surface by either InAs strings of elongated dots or isolated dots can be achieved. Giant intraband absorptions are observed at mid-infrared wavelengths in both nanostructures. The intraband resonances are strongly polarized in the layer plane as a consequence of the quantum confinement along either [110] and [1 - 10] directions. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:82 / 83
页数:2
相关论文
共 50 条
  • [31] Temperature-controlled self-organized InP nanostructures grown on GaAs(100) substrate by MOCVD
    Zhou, J.
    Ren, X. M.
    Wang, Q.
    Huang, Y. Q.
    Lv, J. H.
    Huang, H.
    Cai, S. W.
    MICROELECTRONICS JOURNAL, 2007, 38 (12) : 1207 - 1210
  • [32] InAs nanostructure grown with different growth rate in InAlAs matrix on InP (001) substrate
    Zhao, FA
    Wu, J
    Jin, P
    Xu, B
    Wang, ZG
    Zhang, CL
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 23 (1-2): : 31 - 35
  • [33] Capacitance-voltage analysis of InAs quantum dots grown on InAlAs/InP(001)
    Saad, O.
    Baira, M.
    Ajjel, R.
    Maaref, H.
    Salem, B.
    Bremond, G.
    Gendry, M.
    MICROELECTRONICS JOURNAL, 2008, 39 (01) : 7 - 11
  • [34] Structure and magnetism of self-organized Ni nanostructures on Cu(001)
    Lindner, J
    Poulopoulos, P
    Farle, M
    Baberschke, K
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2000, 218 (01) : 10 - 16
  • [35] Mid-infrared intraband transitions in self-organized InAs/GaAs quantum dots
    Boucaud, P
    Sauvage, S
    Julien, FH
    Gerard, JM
    Thierry-Mieg, V
    Marzin, JY
    LONG WAVELENGTH INFRARED DETECTORS AND ARRAYS: PHYSICS AND APPLICATIONS V, 1997, 33 : 144 - 155
  • [36] Growth and electrical characterization of self-organized InAs quantum wires on InP
    Walther, C
    Erxmeyer, J
    Schippel, E
    Hoering, L
    Masselink, WT
    COMPOUND SEMICONDUCTORS 1999, 2000, (166): : 195 - 198
  • [37] Effect of matrix on InAs self-organized quantum dots on InP substrate
    Ustinov, VM
    Weber, ER
    Ruvimov, S
    Liliental-Weber, Z
    Zhukov, AE
    Egorov, AY
    Kovsh, AR
    Tsatsul'nikov, AF
    Kop'ev, PS
    APPLIED PHYSICS LETTERS, 1998, 72 (03) : 362 - 364
  • [38] InAs quantum dots in InAlAs matrix on (001)InP substrates grown by molecular beam epitaxy
    Li, H
    Wang, Z
    Liang, J
    Xu, B
    Wu, J
    Gong, Q
    Jiang, C
    Liu, F
    Zhou, W
    JOURNAL OF CRYSTAL GROWTH, 1998, 187 (3-4) : 564 - 568
  • [39] Effective generation lifetime depth profile in InAs quantum dots grown on InAlAs/InP(001)
    Ajjel, R
    Baira, M
    Maaref, H
    Salem, B
    Brémond, G
    Gendry, M
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (06) : 514 - 518
  • [40] Monolayer coverage effects on size and ordering of self-organized InAs islands grown on (113)B InP substrates
    Fréchengues, S
    Bertru, N
    Drouot, V
    Paranthoen, C
    Dehaese, O
    Loualiche, S
    Le Corre, A
    Lambert, B
    JOURNAL OF CRYSTAL GROWTH, 2000, 209 (04) : 661 - 665