Low-frequency noise in AlGaN/GaN HEMT structures with AlN thin film layer

被引：8
|
作者：
Vitusevich, S. A. [1 ]
Antoniuk, O. A. [1 ]
Petrychuk, M. V. [2 ,3 ]
Danylyuk, S. V. [1 ]
Kurakin, A. M. [1 ]
Belyaev, A. E. [4 ]
Klein, N. [1 ]
机构：
[1] Res Ctr Julich, Inst Thin Films & Interfaces, D-52425 Julich, Germany
[2] Res Ctr Julich, Ctr Nanoelect Syst Informat Technol, D-52425 Julich, Germany
[3] Taras Shevchenko Natl Univ, UA-01033 Kiev, Ukraine
[4] V Lashkaryov Inst Semicond Phys, UA-03028 Kiev, Ukraine
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 | 2006年 / 3卷 / 06期
关键词：
3;
D O I：
10.1002/pssc.200565138
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Low-frequency noise in AlGaN/GaN high electron mobility transistor (HEMT) heterostructures with additional AlN thin barrier layer is investigated. Transmission line model structures with different lengths of the conducting channel formed by polarization effects at the heterointerface of undoped AlGaN/AlN/GaN layers are studied. The measured noise demonstrates an unusual broadening of the generation-recombination components of the spectra. To explain the noise behaviour of the structure we consider a model taking into account peculiarities of the band structure of the interface with inserted AlN high molar fraction barrier layer. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：2329 / 2332
页数：4
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