Noise spectroscopy of AlGaN/GaN HEMT structures with long channels

被引：2

作者：

Vitusevich, S. A. ^{[1
,2
]}

Petrychuk, M. V. ^{[3
]}

Kurakin, A. M. ^{[1
,2
]}

Danylyuk, S. V. ^{[1
,2
]}

Mayer, D. ^{[1
,2
]}

Bougrioua, Z. ^{[4
]}

Naumov, A. V. ^{[5
]}

Belyaev, A. E. ^{[5
]}

Klein, N. ^{[1
,2
]}

机构：

[1] Forschungszentrum Julich, Inst Bio & Nanosyst, D-52425 Julich, Germany

[2] Forschungszentrum Julich, CNI, Ctr Nanoelect Syst Informat Technol, D-52425 Julich, Germany

[3] Taras Shevchenko Natl Univ, UA-01033 Kiev, Ukraine

[4] CNRS, Ctr Rech Heteroepitaxie & Applicat, F-06560 Valbonne, France

[5] NASU, Inst Semicond Phys, UA-03028 Kiev, Ukraine

来源：

JOURNAL OF STATISTICAL MECHANICS-THEORY AND EXPERIMENT | 2009年

关键词：

current fluctuations; ELECTRON;

D O I：

10.1088/1742-5468/2009/01/P01046

中图分类号：

O3 [力学];

学科分类号：

08 ; 0801 ;

摘要：

In this paper we discuss the effect of dissipated power on the characteristic time of noise spectra transformation investigated in wide-bandgap AlGaN/GaN transistor structures with long channels. It is found that the characteristic time as a function of temperature demonstrates an exponential dependence with definite activation energy. Obtained results are explained based on the developed model of non-equilibrium fluctuations of the sample resistance. These fluctuations cause a local overheating due to local change of resistance. In the long channels these fluctuations may create overheating regions with two different self-heating temperatures, leading to different activation dependences, observed in the experiment.

引用

页数：10

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