Design of CMOS Temperature Sensors Based on Ring Oscillators in 180-nm and 110-nm technology

被引：0
|
作者：
Tolic, Ivan Porin [1 ]
Mikulic, Josip [1 ]
Schatzberger, Gregor [1 ]
Baric, Adrijan [2 ]
机构：
[1] Ams AG, Tobelbader Str 39, A-8141 Premstatten, Austria
[2] Univ Zagreb, Fac Elect Engn & Comp, Unska 3, Zagreb, Croatia
来源：
2020 43RD INTERNATIONAL CONVENTION ON INFORMATION, COMMUNICATION AND ELECTRONIC TECHNOLOGY (MIPRO 2020) | 2020年
关键词：
CMOS integrated circuit; smart temperature sensor; ring oscillator; time-to-digital converter; digital counter; mixed-signal design; 3-SIGMA INACCURACY; -55-DEGREES-C;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work two on-chip smart temperature sensors are presented. Both designs are based on two ring oscillators operating complementary. The readout circuit is achieved using time-to-digital converter and digital counter. The first sensor is designed in 180-nm technology, and the other is designed in 110-nm. The simulation results from both sensors are presented in the temperature range from -40 to 125 degrees C. The first design achieves an accuracy of +4.9/-0.2 degrees C, while the other achieves an accuracy of +/- 3.8 degrees C.
引用
收藏
页码：104 / 108
页数：5
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