Design and measurements of low power 32-kHz oscillators and a test interface in 180-nm CMOS technology

被引：0
|
作者：
Kuljak, Ivan [1 ]
Tomic, Ivan [1 ]
Bertolan, Roman [1 ]
Mikulic, Josip [2 ]
Schatzberger, Gregor [2 ]
Fellner, Johannes [2 ]
Baric, Adrijan [1 ]
机构：
[1] Univ Zagreb, Fac Elect Engn & Comp, Unska 3, Zagreb 10000, Croatia
[2] ams AG, Tobelbader Str 30, A-8141 Premstatten, Austria
来源：
2020 43RD INTERNATIONAL CONVENTION ON INFORMATION, COMMUNICATION AND ELECTRONIC TECHNOLOGY (MIPRO 2020) | 2020年
关键词：
electronics; microelectronics; CMOS technology; 180-nm; oscillator; test interface; low power; real time clock; temperature compensated;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the design and measurements of two oscillators used as oscillator cores in the 1-Hz oscillator circuit. The output frequency drift is obtained by parametric analyses varying the supply voltage from 1.1 to 1.3 V, referent current from 70 to 140 nA, bias current from 35 to 70 nA and temperature from -40 degrees C to 80 degrees C. The oscillator chip is processed and measured. The frequency characteristics are extracted from measurements using the test interface. The built-in test interface is supplied by an external power supply whose nominal voltage is 1.8 V. The voltage buffer within the test interface allows for indirect measurement of signals on high impedance nodes. The voltage buffer output is capable of driving standard digital multimeter (DMM) input loads.
引用
收藏
页码：83 / 88
页数：6
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