Accurate depth profiling of ultra-thin oxide films by secondary ion mass spectrometry

被引：1
|
作者：
Smith, SP
Yang, MH
Chia, VKF
机构：
来源：
SCIENCE AND TECHNOLOGY OF SEMICONDUCTOR SURFACE PREPARATION | 1997年 / 477卷
关键词：
D O I：
10.1557/PROC-477-347
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
SurfaceSIMS depth profile measurements of dopants in silicon wafers with thin thermal oxide layers are presented. Complete and accurate calibration of these profiles requires layered data reduction to adjust for residual matrix effects of a factor of two in the sputter rate and SIMS relative sensitivity factor in SiO2 compared with bulk silicon. Properly calibrated profiles show good agreement with expected ion implant profile shapes, and can reveal dopant pile-up at SiO2/Si interfaces (phosphorus, for example), Measured SurfaceSIMS profiles of B doping within the first 10 nm of the substrate Si of experimental large area MOS capacitors show good agreement with dopant profiles independently obtained from experimental C-V data.
引用
收藏
页码：347 / 352
页数：6
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