Depth Profiling of Layered Si−O−Al Thin Films with Secondary Ion Mass Spectrometry and Rutherford Backscattering Spectrometry

被引：0

作者：

V. I. Bachurin

N. S. Melesov

A. A. Mironenko

E. O. Parshin

A. S. Rudy

S. G. Simakin

A. B. Churilov

机构：

[1] Yaroslavl Branch of the Institute of Physics and Technology,

[2] Russian Academy of Sciences,undefined

来源：

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques | 2019年 / 13卷

关键词：

depth profiling; secondary-ion mass spectrometry; Rutherford backscattering spectrometry;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：300 / 305

页数：5

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