Surface activated bonding of aluminum oxide films at room temperature

被引：16
|
作者：
Utsumi, Jun [1 ,2 ]
Takigawa, Ryo [3 ]
机构：
[1] Mitsubishi Heavy Ind Machine Tool Co Ltd, Adv Mfg Syst Res Ctr, 130 Rokujizo, Ritto, Shiga 5203080, Japan
[2] Kanagawa Univ Human Serv, Community Res Dev Ctr, 1-10-1 Heisei Cho, Yokosuka, Kanagawa 2388522, Japan
[3] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Nishi Ku, 744 Motooka, Fukuoka 8190395, Japan
来源：
SCRIPTA MATERIALIA | 2021年 / 191卷
关键词：
Room temperature bonding; Surface activated bonding; Bonding of Al2O3; SILICON-WAFERS; THIN-FILM; SUBSTRATE;
D O I：
10.1016/j.scriptamat.2020.09.005
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have investigated the surface activated bonding (SAB) of deposited Al2O3 films by chemical vapor deposition under a short-time activated condition at room temperature. Although the surface energy for bonding of Al2O3 films was very low, that of Al2O3 film/sapphire bonding was approximately 1 J m(-2) and more than 2 J m(-2) for sapphire/sapphire bonding. Transmission electron microscopy showed an amorphous-like intermediate layer approximately 1 nm thick, observed at the bonding interface of Al2O3/Al2O3, but not in the bonding of Al2O3/sapphire, which suggests that the crystallinity of the Al2O3 film affects the bonding of Al2O3. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：215 / 218
页数：4
相关论文
共 50 条
  • [1] Room temperature GaN bonding by surface activated bonding methods
    Mu, Fengwen
    Suga, Tadatomo
    [J]. 2018 19TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT), 2018, : 521 - 524
  • [2] Surface activated bonding of silicon wafers at room temperature
    Takagi, H
    Kikuchi, K
    Maeda, R
    Chung, TR
    Suga, T
    [J]. APPLIED PHYSICS LETTERS, 1996, 68 (16) : 2222 - 2224
  • [3] Research Progress of Surface Activated Bonding at Room Temperature
    Zhang, Hongze
    Tian, Ye
    Meng, Ying
    Mu, Fengwen
    Wang, Xinhua
    Liu, Xinyu
    [J]. Jixie Gongcheng Xuebao/Journal of Mechanical Engineering, 2022, 58 (02): : 136 - 146
  • [4] Room Temperature Wafer Bonding Using Surface Activated Bonding Method
    Taniyama, Shingo
    Wang, Ying-Hui
    Fujino, Masahisa
    Suga, Tadatomo
    [J]. IEEE 9TH VLSI PACKAGING WORKSHOP IN JAPAN, 2008, : 141 - 144
  • [5] Aluminum to Aluminum Bonding at Room Temperature
    Marion, F.
    de Brugiere, B. Goubault
    Bedoin, A.
    Volpert, M.
    Berger, F.
    Gueugnot, A.
    Anciant, R.
    Ribot, H.
    [J]. 2013 IEEE 63RD ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2013, : 146 - 153
  • [6] Room Temperature Bonding method for polymer films by Surface Activated Bonding method using Al intermediate layer
    Matsumae, Takashi
    Fujino, Masahisa
    Suga, Tadatomo
    [J]. 2014 INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING (ICEP), 2014, : 204 - 207
  • [7] UHV room temperature joining by the surface activated bonding method
    Suga, T
    [J]. INDUSTRIAL CERAMICS, 1999, 19 (03): : 176 - 178
  • [8] Tiny Integrated Laser by Room Temperature Surface Activated Bonding
    Kausas, Arvydas
    Zheng, Lihe
    Taira, Takunori
    [J]. PROCEEDINGS OF 2019 6TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D), 2019, : 6 - 6
  • [9] Properties of zinc oxide films cosputtered with aluminum at room temperature
    Liu, Day-Shan
    Tsai, Fu-Chun
    Lee, Ching-Ting
    Sheu, Cheng-Wei
    [J]. Japanese Journal of Applied Physics, 2008, 47 (4 PART 2): : 3056 - 3062
  • [10] Properties of zinc oxide films cosputtered with aluminum at room temperature
    Liu, Day-Shan
    Tsai, Fu-Chun
    Lee, Ching-Ting
    Sheu, Cheng-Wei
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (04) : 3056 - 3062
12345