The use of a green's function formalism for the simulation of semiconductor device performance

Non-equilibrium quantum transport simulation techniques (e.g. the generalized Kadanoff-Baym approach) have been in existence for over 40 years but have only recently become numerically viable for the simulation of semiconductor devices. This paper reports on Motorola's effort at building a quantum transport-based device simulator suitable for the predictive quantum-mechanical simulation of MOSFETs beyond the L-eff = 100nm technology-node.