The use of a green's function formalism for the simulation of semiconductor device performance

被引：0

作者：

Jovanovic, Dejan ^{[1
]}

机构：

[1] Motorola Inc, Phys Sci Res Lab, Los Alamos, NM 87544 USA

来源：

ICCN 2002: INTERNATIONAL CONFERENCE ON COMPUTATIONAL NANOSCIENCE AND NANOTECHNOLOGY | 2002年

关键词：

quantum transport; non-equilibrium green functions; device simulation; mosfet;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Non-equilibrium quantum transport simulation techniques (e.g. the generalized Kadanoff-Baym approach) have been in existence for over 40 years but have only recently become numerically viable for the simulation of semiconductor devices. This paper reports on Motorola's effort at building a quantum transport-based device simulator suitable for the predictive quantum-mechanical simulation of MOSFETs beyond the L-eff = 100nm technology-node.

引用

页码：181 / 184

页数：4

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