Effect of drain voltage on channel temperature and reliability of pseudomorphic InP-based HEMTs

被引：2

作者：

Dammann, M ^{[1
]}

Chertouk, M ^{[1
]}

Jantz, W ^{[1
]}

Köhler, K ^{[1
]}

Marsetz, W ^{[1
]}

Schmidt, KH ^{[1
]}

Weimann, G ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

来源：

MICROELECTRONICS RELIABILITY | 2000年 / 40卷 / 02期

关键词：

D O I：

10.1016/S0026-2714(99)00206-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By performing biased accelerated life tests and three dimensional temperature simulations the effect of drain voltage on reliability and channel temperature of pseudomorphic InAlAs/InGaAs HEMTs for low noise applications was investigated. At V-d = 1 V excellent long term stability in nitrogen ambient was observed. Increasing the drain voltage to V-d = 2 V at constant channel temperature leads to a faster degradation rate which is caused by field accelerated degradation mechanism, probably involving fluorine diffusion. The influence of gate width on channel temperature and reliability was found to be small. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：287 / 291

页数：5

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