Suppression of drain conductance in InP-based HEMTs by eliminating hole accumulation

被引：13

作者：

Arai, T ^{[1
]}

Sawada, K ^{[1
]}

Okamoto, N ^{[1
]}

Makiyama, K ^{[1
]}

Takahashi, T ^{[1
]}

Hara, N ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430497, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 05期

关键词：

drain conductance; frequency dispersion; HEMT; kink phenomena;

D O I：

10.1109/TED.2003.813463

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed planar-type InP-bqsed high-electron mobility transistors (HEMTs) that significantly suppress the frequency dispersion of drain conductance (g(d)) and the kink phenomena, and have examined the physical mechanisms of these phenomena. These phenomena appear to be caused by hole accumulation at the extrinsic source due to impact ionization. Our planar structure includes alloyed ohmic contacts that eliminate the hole barrier at the interface between the carrier-supply layer and the channel in the source and drain region to suppress hole accumulation. Therefore, the planar structure effectively eliminated hole accumulation at the extrinsic source, and suppressed g(d) frequency dispersion to 25 % and the kink phenomena to 50 % compared with conventional structure HEMTs.

引用

页码：1189 / 1193

页数：5

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