Microwave performance of InP-based hemts for low-voltage application

被引：0

作者：

Strahle, S

Henle, B

Lee, L

Kunzel, H

Hackbarth, T

Dickmann, J

Kohn, E

机构：

[1] Department of Electron Devices and Circuits, University of Ulm, D-89069 Ulm

[2] Heinrich-Hertz-Institut Berlin GmbH, D-10587 Berlin

[3] Daimler-Benz Research Laboratory, D 89081 Ulm

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1996年 / 11卷 / 03期

关键词：

InP-based HEMT; composite channel HEMT; low voltage application;

D O I：

10.1002/(SICI)1098-2760(19960220)11:3<131::AID-MOP6>3.0.CO;2-M

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Usually high power gain is achieved at the expense of reduced f(t). In this investigation a high f(max)/f(t) ratio of 26 is obtained in combination with a f(t) * L(g) product of 39 GHz mu m, equivalent to an effective velocity of 2.45 * 10(7) cm/s. Despite a relaxed gate length of approximately 0.5 mu m, these features were obtained at low drain bias of V-d = 1.5 V. (C) 1996 John Wiley & Sons, Inc.

引用

页码：131 / 135

页数：5

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