InP-based HEMTs for high speed, low power circuit applications

被引：1

作者：

Adesida, I ^{[1
]}

Mahajan, A ^{[1
]}

Cueva, G ^{[1
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICSICT.1998.785953

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Processes for the monolithic integration of enhancement- and depletion-mode HEMTs (E/D-HEMTs) in the lattice matched InP material system are described. Using the buried Pt gate technology, 0.3 mu m gate-length E-HEMTs exhibiting a threshold voltage of +167 mV and a maximum extrinsic transconductance gmexp of 700 mS/mm are demonstrated. D-HEMTs with corresponding device parameters of -443 mV and 462 mS/mm are presented. Unity current gain cut-off frequencies of over 95 GHz were obtained for these devices. Implementation of a divide-by-four prescaler in the direct coupled FET logic technology based on E- and D-HEMTs is demonstrated.

引用

页码：579 / 582

页数：4

共 50 条

[1] InP-based HEMTs for high speed, low power circuit applications
Adesida, I.
Mahajan, A.
Cueva, G.
International Conference on Solid-State and Integrated Circuit Technology Proceedings, 1998, : 579 - 582
[2] InP-based HEMTs for millimeter wave and submillimeter wave power applications
Matloubian, M
MILLIMETER AND SUBMILLIMETER WAVES III, 1996, 2842 : 22 - 32
[3] Reliability of InP-Based HBT IC technology for high-speed, low-power applications
Hafizi, M
Stanchina, WE
Williams, F
Jensen, JF
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1995, 43 (12) : 3048 - 3054
[4] Reliability of InP-based HBT IC technology for high-speed, low-power applications
Hafizi, Madjid
Stanchina, William E.
Williams, Freddie
Jensen, Joseph F.
IEEE Transactions on Microwave Theory and Techniques, 1995, 43 (12 pt 2): : 3048 - 3054
[5] High speed, low power, optoelectronic InP-based HBT integrated circuits
Sokolich, M
PROCEEDINGS OF THE IEEE 2002 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2002, : 483 - 490
[6] IMPROVED SOURCE RESISTANCE IN INP-BASED ENHANCEMENT-MODE HEMTS FOR HIGH-SPEED DIGITAL APPLICATIONS
CHEN, KJ
MAEZAWA, K
ARAI, K
YAMAMOTO, M
ENOKI, T
ELECTRONICS LETTERS, 1995, 31 (11) : 925 - 927
[7] Ultrahigh-speed integrated circuits using InP-based HEMTs
Enoki, T
Yokoyama, H
Umeda, Y
Otsuji, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (3B): : 1359 - 1364
[8] Gate and recess engineering for ultrahigh-speed InP-based HEMTs
Suemitsu, T
Ishii, T
Ishii, Y
IEICE TRANSACTIONS ON ELECTRONICS, 2001, E84C (10): : 1283 - 1288
[9] Excess gate leakage at low voltage in InP-based HEMTs
Maher, H
Scavennec, A
Décobert, J
Post, G
2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2000, : 83 - 86
[10] Impact ionization in InP-based HEMTs
Webster, RT
Anwar, AFM
Wu, SL
IEEE/CORNELL CONFERENCE ON ADVANCED CONCEPTS IN HIGH SPEED SEMICONDUCTOR DEVICES AND CIRCUITS, PROCEEDINGS, 1997, : 172 - 181

← 1 2 3 4 5 →