Modeling the thermal response of semiconductor devices through equivalent electrical networks

被引：27

作者：

Codecasa, L ^{[1
]}

D'Amore, D ^{[1
]}

Maffezzoni, P ^{[1
]}

机构：

[1] Politecn Milan, Dipartimento Elettron & Informat, I-20133 Milan, Italy

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS | 2002年 / 49卷 / 08期

关键词：

circuit modeling; electrothermal analysis; thermal instability;

D O I：

10.1109/TCSI.2002.801279

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper presents a general approach for modeling the effects of thermal response in semiconductor devices as they are seen at the electrical terminals. It is shown that this can be achieved by properly connecting at the electrical ports an equivalent electrical network representing the transformed thermal impedance. The equivalent model is employed to investigate electrothermal interactions in MOSFETs and bipolar junction transistors. Precise conditions for which electrothermal resonant oscillations arise are deduced and an experimental technique for thermal-impedance extraction is presented.

引用

页码：1187 / 1197

页数：11

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