High performance GaN based blue flip-chip light-emitting diode

被引：0

作者：

Jin, G. M. ^{[1
]}

Choi, I. G. ^{[1
]}

Park, J. C. ^{[1
]}

Jeon, S. K. ^{[1
]}

Park, E. H. ^{[1
]}

机构：

[1] Semicon Light Co Ltd, Res & Dev Team, Yonginsi 446901, Gyeonggido, South Korea

来源：

FOURTEENTH INTERNATIONAL CONFERENCE ON SOLID STATE LIGHTING AND LED-BASED ILLUMINATION SYSTEMS | 2015年 / 9571卷

关键词：

Flip Chip; Light Emitting Diode; Distributed Bragg Reflectors; Silver;

D O I：

10.1117/12.2185915

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, high performance nitride-based flip-chip (FC) light-emitting diodes (LEDs) using optimized distributed bragg reflector (DBR) were fabricated and compared with conventional FC-LED using silver (Ag) reflector. Most of FCLEDs are using the silver (Ag) as reflector due to its superior reflectance at visual spectrum region. However, A silver has detrimental problems such as electro-chemical migration and agglomerations, which resulting in reliability issues such as degradation of power drop, unstable operating voltage and leakage issues. Our DBR structure was designed to have 99% at whole visible spectrum range (400 similar to 750nm), which is higher reflectance than silver reflector (90 similar to 95%). Optical power is higher than higher than the Ag-LED up to 30% @ 500mA. As the current increases up to 1A, the gap slightly decreased. Reliability test results show stable optical power, operating voltage, and leakage maintenance.

引用

页数：4

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