Flip-chip GaN-based light-emitting diodes with mesh-contact electrodes

被引：0
|
作者：
Zhu Yan-Xu [1 ]
Chen, Xu [1 ]
Jun, Han [1 ]
Shen Guang-Di [1 ]
机构：
[1] Beijing Univ Technol, Beijing Optoelect Technol Lab, Inst Elect Engn & Informat, Beijing 100022, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2007年 / 24卷 / 01期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
GaN-based light-emitting diodes (LEDs) with mesh-contact electrodes have been developed. The p-type ohmic contact layer is composed of oxidized Ni/Au mesh and NiO overlay (20 angstrom). An Ag (3000 angstrom) onmi-directional reflector covers the p-type contact. The n-type contact is a Ti/Al planar film with a 10-mu m-width Ti/Al stripe. The Ti/Al stripe surrounds the centre of LED mesa. With a 20-mA current injection, the light output power of GaN-based LEDs with mesh-contact electrodes is 23% higher than that of the conventional LEDs.
引用
收藏
页码：268 / 270
页数：3
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