Defects Identified in SiC and Their Implications

被引：2

作者：

Bockstedte, M. ^{[1
,2
]}

Marini, A. ^{[3
,4
]}

Gali, A. ^{[5
]}

Pankratov, O. ^{[1
]}

Rubio, A. ^{[2
]}

机构：

[1] Univ Erlangen Nurnberg, Theoret Festkorperphys, Staudtstr 7B2, D-91058 Erlangen, Germany

[2] Univ Pais Vasco UPV EHU, Dept Fis Mat, European Theoret Spect Facil, San Sebastian 20018, Spain

[3] Univ Roma Tor Vergata, CNISM, CNR INFM Inst Stat Mech & Complex, European Theoret Spect Facil, I-00133 Rome, Italy

[4] Univ Roma Tor Vergata, Dipartimento Fis, I-00133 Rome, Italy

[5] Budapest Univ Technol & Econ, Dept Atom Phys, H-1111 Budapest, Hungary

来源：

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷

关键词：

vacancy-related centers; optical excitation; hyperfine tensors; photo-EPR; quasi particles; excitonic effects; ELECTRON-PARAMAGNETIC-RESONANCE; CARBON VACANCY; 4H;

D O I：

10.4028/www.scientific.net/MSF.600-603.285

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Defect signatures, such as deep level positions, hyperfine parameters, local vibrational modes and optical transitions characterize a defect and enable the identification of defect centers. This identification is a key to an understanding of complex phenomena like the defect kinetics. Albeit density functional theory enabled the identification of several defects and their kinetic properties, a new approach is needed to address the optical excitation of defect. Within a quasiparticle theory and taking into account excitonic effects we analyze the excited states of V-C(+).

引用

页码：285 / +

页数：2

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