A high-speed silicon single-electron random access memory

被引：6
|
作者：
Stone, NJ [1 ]
Ahmed, I
Nakazato, K
机构：
[1] Cavendish Lab, Microelect Res Ctr, Cambridge CB3 OHE, England
[2] Univ Cambridge, Cavendish Lab, Hitachi Cambridge Lab, Cambridge CB3 0HE, England
来源：
IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 11期
关键词：
D O I：
10.1109/55.798051
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A silicon random access memory using a single-electron tunnelling transistor (SETT) in the form of a multiple tunnel junction (MTJ) in a silicon nanowire has been assessed in terms of its write speed, retention time, and selectivity at an operating temperature of 4.2 K.
引用
收藏
页码：583 / 585
页数：3
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