A high-speed silicon single-electron random access memory

被引：6
|
作者：
Stone, NJ [1 ]
Ahmed, I
Nakazato, K
机构：
[1] Cavendish Lab, Microelect Res Ctr, Cambridge CB3 OHE, England
[2] Univ Cambridge, Cavendish Lab, Hitachi Cambridge Lab, Cambridge CB3 0HE, England
来源：
IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 11期
关键词：
D O I：
10.1109/55.798051
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A silicon random access memory using a single-electron tunnelling transistor (SETT) in the form of a multiple tunnel junction (MTJ) in a silicon nanowire has been assessed in terms of its write speed, retention time, and selectivity at an operating temperature of 4.2 K.
引用
收藏
页码：583 / 585
页数：3
相关论文
共 50 条
  • [1] High-speed single-electron memory:: cell design and architecture
    Mizuta, H
    Williams, D
    Katayama, K
    Müller, HO
    Nakazato, K
    Ahmed, H
    [J]. SECOND INTERNATIONAL WORKSHOP ON PHYSICS AND MODELING OF DEVICES BASED ON LOW-DIMENSIONAL STRUCTURES, PROCEEDINGS, 1998, : 67 - 72
  • [2] High-speed operation of Si single-electron transistor
    Takahashi, Yasuo
    Takenaka, Hiroto
    Uchida, Takafumi
    Arita, Masashi
    Fujiwara, Akira
    Inokawa, Hiroshi
    [J]. ULSI PROCESS INTEGRATION 8, 2013, 58 (09): : 73 - 80
  • [3] Design and simulation of a single-electron random-access memory array
    Karafyllidis, L
    [J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2002, 49 (09) : 1370 - 1375
  • [4] Silicon single-electron memory structure
    Stone, N.J.
    Ahmed, H.
    [J]. Microelectronic Engineering, 1998, 41-42 : 511 - 514
  • [5] Silicon single-electron memory structure
    Stone, NJ
    Ahmed, H
    [J]. MICROELECTRONIC ENGINEERING, 1998, 42 : 511 - 514
  • [6] An accurate high-speed single-electron quantum dot pump
    Giblin, S. P.
    Wright, S. J.
    Fletcher, J. D.
    Kataoka, M.
    Pepper, M.
    Janssen, T. J. B. M.
    Ritchie, D. A.
    Nicoll, C. A.
    Anderson, D.
    Jones, G. A. C.
    [J]. NEW JOURNAL OF PHYSICS, 2010, 12
  • [7] HIGH-SPEED BIPOLAR RANDOM ACCESS MEMORY SERIES.
    Ogiue, Katsumi
    Oowaki, Seishirou
    [J]. Hitachi Review, 1980, 29 (03): : 115 - 118
  • [8] HIGH-SPEED GAAS STATIC RANDOM-ACCESS MEMORY
    BERT, G
    MORIN, JP
    NUZILLAT, G
    ARNODO, C
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (07) : 1014 - 1019
  • [9] STRESS OPERATED RANDOM-ACCESS, HIGH-SPEED MAGNETIC MEMORY
    SCHRODER, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 2759 - 2761
  • [10] STRESS OPERATED RANDOM ACCESS, HIGH-SPEED MAGNETIC MEMORY.
    Schroder, Klaus
    [J]. Journal of Applied Physics, 1981, 53 (3 pt 2): : 2759 - 2761
12345