STRESS OPERATED RANDOM ACCESS, HIGH-SPEED MAGNETIC MEMORY.

被引：0
|
作者：
Schroder, Klaus [1 ]
机构：
[1] Department of Chemical Engineering and Materials Science, Syracuse University, Syracuse, NY 13210, United States
来源：
Journal of Applied Physics | 1981年 / 53卷 / 3 pt 2期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：2759 / 2761
相关论文
共 50 条
  • [1] STRESS OPERATED RANDOM-ACCESS, HIGH-SPEED MAGNETIC MEMORY
    SCHRODER, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 2759 - 2761
  • [2] HIGH-SPEED BIPOLAR 128-BIT RANDOM-ACCESS MEMORY.
    Buerker, Ulf
    Rydval, Peter
    [J]. Siemens Review, 1975, 42 (09): : 402 - 406
  • [3] HIGH-SPEED BIPOLAR RANDOM ACCESS MEMORY SERIES.
    Ogiue, Katsumi
    Oowaki, Seishirou
    [J]. Hitachi Review, 1980, 29 (03): : 115 - 118
  • [4] HIGH-SPEED GAAS STATIC RANDOM-ACCESS MEMORY
    BERT, G
    MORIN, JP
    NUZILLAT, G
    ARNODO, C
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (07) : 1014 - 1019
  • [5] Laser powered Magnetic-Random Access Memory.
    Xu, Y.
    Lin, W.
    Hehn, M.
    Lu, Y.
    Rinnert, H.
    Petit, S.
    Montaigne, F.
    Chaput, L.
    Negulescu, B.
    Andrieu, S.
    Mangin, S.
    [J]. 2015 IEEE MAGNETICS CONFERENCE (INTERMAG), 2015,
  • [6] Performance of shape-varying magnetic tunneling junction for high-speed magnetic random access memory cells
    Honjo, H.
    Fukami, S.
    Nebashi, R.
    Suzuki, T.
    Ishiwata, N.
    Miura, S.
    Sugibayashi, T.
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 105 (07)
  • [7] A high-speed silicon single-electron random access memory
    Stone, NJ
    Ahmed, I
    Nakazato, K
    [J]. IEEE ELECTRON DEVICE LETTERS, 1999, 20 (11) : 583 - 585
  • [8] MgO-based tunnel junction material for high-speed toggle magnetic random access memory
    Dave, Renu W.
    Steiner, G.
    Slaughter, J. M.
    Sun, J. J.
    Craigo, B.
    Pietambaram, S.
    Smith, K.
    Grynkewich, G.
    DeHerrera, M.
    Akerman, J.
    Tehrani, S.
    [J]. IEEE TRANSACTIONS ON MAGNETICS, 2006, 42 (08) : 1935 - 1939
  • [9] RANDOM ACCESS VIDEO DISC MEMORY.
    Kameyama, Yukio
    Yoshida, Takeshi
    Masuko, Hitoshi
    Yaguchi, Keiichi
    [J]. NHK Laboratories Note, 1976, (199):
  • [10] A High-Speed Current Mode Sense Amplifier for Spin-Torque Transfer Magnetic Random Access Memory
    Cheng, Chia-Tsung
    Tsai, Yu-Chang
    Cheng, Kuo-Hsing
    [J]. 53RD IEEE INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, 2010, : 181 - 184
12345