STRESS OPERATED RANDOM ACCESS, HIGH-SPEED MAGNETIC MEMORY.

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作者：
Schroder, Klaus [1 ]
机构：
[1] Department of Chemical Engineering and Materials Science, Syracuse University, Syracuse, NY 13210, United States
来源：
Journal of Applied Physics | 1981年 / 53卷 / 3 pt 2期
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页码：2759 / 2761
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