ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium

被引：18
|
作者：
Salauen, A. [1 ]
Veillerot, M. [1 ]
Pierre, F. [1 ]
Souchier, E. [1 ]
Jousseaume, V. [1 ]
机构：
[1] CEA, LETI, F-38054 Grenoble, France
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2014年 / 3卷 / 03期
关键词：
DIELECTRIC-PROPERTIES; GRAIN-BOUNDARY; ZIRCONIUM; OXIDES; PRECURSORS; HFO2; CP2ZR(CH3)(2); CRYSTALLINE; TEMPERATURE;
D O I：
10.1149/2.012403jss
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, we report the growth of ZrO2 thin films on TiN substrates using Plasma Enhanced Atomic Layer Deposition (PEALD) process starting from cyclopentadienyltris(dimetylamino)zirconium and oxygen plasma as precursor and reactant, respectively. The material properties - structure, morphology and composition - are investigated as a function of process parameters such as number of cycles, deposition temperature and plasma conditions. Electrical performances - in terms of breakdown field and leakage currents - are investigated as a function of deposition temperature on Au/ZrO2/TiN capacitors, giving an evidence for an impact of the crystallinity and impurities. (C) 2014 The Electrochemical Society.
引用
收藏
页码：N39 / N45
页数：7
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