Atomic-layer deposition of ZrO2 thin films using new alkoxide precursors

被引：0
|
作者：
Jones, AC [1 ]
Williams, PA [1 ]
Roberts, JL [1 ]
Leedham, TJ [1 ]
Davies, HO [1 ]
Matero, R [1 ]
Ritala, M [1 ]
Leskelä, M [1 ]
机构：
[1] Univ Liverpool, Dept Chem, Liverpool L69 7ZD, Merseyside, England
来源：
SILICON MATERIALS-PROCESSING, CHARACTERIZATION AND RELIABILITY | 2002年 / 716卷
关键词：
D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Atomic layer deposition is a promising technique for the deposition of ZrO2 thin films for high-k gate dielectric applications. However, there are a number of problems associated with existing Zr precursors such as ZrCl4 and [Zr(OBut)(4)]. In this paper, we examine the ALD of ZrO2 using the new alkoxide complexes, [Zr(OBut)(2)(dmae)(2)], [Zr(OPri)(2)(dmae)(2)] and [Zr(dmae)(4)] (dmae = [OCH2CH2NMe2]), and compare the results with data obtained using [Zr(OBut)(4)].
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页码：145 / 150
页数：6
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