Atomic-layer deposition of ZrO2 thin films using new alkoxide precursors

被引：0

作者：

Jones, AC ^{[1
]}

Williams, PA ^{[1
]}

Roberts, JL ^{[1
]}

Leedham, TJ ^{[1
]}

Davies, HO ^{[1
]}

Matero, R ^{[1
]}

Ritala, M ^{[1
]}

Leskelä, M ^{[1
]}

机构：

[1] Univ Liverpool, Dept Chem, Liverpool L69 7ZD, Merseyside, England

来源：

SILICON MATERIALS-PROCESSING, CHARACTERIZATION AND RELIABILITY | 2002年 / 716卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Atomic layer deposition is a promising technique for the deposition of ZrO2 thin films for high-k gate dielectric applications. However, there are a number of problems associated with existing Zr precursors such as ZrCl4 and [Zr(OBut)(4)]. In this paper, we examine the ALD of ZrO2 using the new alkoxide complexes, [Zr(OBut)(2)(dmae)(2)], [Zr(OPri)(2)(dmae)(2)] and [Zr(dmae)(4)] (dmae = [OCH2CH2NMe2]), and compare the results with data obtained using [Zr(OBut)(4)].

引用

页码：145 / 150

页数：6

共 50 条

[21] Atomic layer deposition and properties of ZrO2/Fe2O3 thin films
Kalam, Kristjan
Seemen, Helina
Ritslaid, Peeter
Rahn, Mihkel
Tamm, Aile
Kukli, Kaupo
Kasikov, Aarne
Link, Joosep
Stern, Raivo
Duenas, Salvador
Castan, Helena
Garcia, Hector
BEILSTEIN JOURNAL OF NANOTECHNOLOGY, 2018, 9 : 119 - 128
[22] Atomic layer deposition of ZrO2 thin films using dichlorobis [bis-(trimethylsilyl)amido] zirconium and water
Nam, WH
Rhee, SW
CHEMICAL VAPOR DEPOSITION, 2004, 10 (04) : 201 - 205
[23] Characteristics of High-Crystallinity ZrO2 Thin Films Deposited Using Remote Plasma Atomic Layer Deposition
Song, Seokhwi
Jung, Chanwon
Kim, Jisoo
Kim, Younsoo
Lim, Hanjin
Jeon, Hyeongtag
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2023, 220 (01):
[24] Synthesis of ZrO2 thin films by atomic layer deposition:: growth kinetics, structural and electrical properties
Cassir, M
Goubin, F
Bernay, C
Vernoux, P
Lincot, D
APPLIED SURFACE SCIENCE, 2002, 193 (1-4) : 120 - 128
[25] Enhanced oxygen sensing in ZrO2 thin films via atomic layer deposition by post-deposition annealing
Bohórquez Martínez, Carolina
Vazquez Arce, Jorge Luis
Cuentas Gallegos, Ana Karina
Tiznado, Hugo
Ceramics International, 2025, 51 (07) : 9464 - 9471
[26] Novel deuterated cyclopentadienyl zirconium/hafnium precursors for atomic layer deposition of high-performance ZrO2/HfO2 thin films
Park, Sunwoo
Choi, Yoona
Park, Sangwook
Lee, Hayoon
Lee, Kiho
Kang, Seokwoo
Park, Jongwook
Jeon, Woojin
APPLIED MATERIALS TODAY, 2024, 40
[27] ZrO2 thin films grown on silicon substrates by atomic layer deposition with Cp2Zr(CH3)2 and water as precursors
Putkonen, M
Niinistö, J
Kukli, K
Sajavaara, T
Karppinen, M
Yamauchi, H
Niinistö, L
CHEMICAL VAPOR DEPOSITION, 2003, 9 (04) : 207 - 212
[28] Effect of La doping on dielectric constant and tetragonality of ZrO2 thin films deposited by atomic layer deposition
Jeong, Juyoung
Han, Yoogeun
Sohn, Hyunchul
JOURNAL OF ALLOYS AND COMPOUNDS, 2022, 927
[29] New Heteroleptic Germanium Precursors for GeO2 Thin Films by Atomic Layer Deposition
Choi, Heenang
Park, Chanwoo
Lee, Sung Kwang
Ryu, Ji Yeon
Son, Seung Uk
Eom, Taeyong
Chung, Taek-Mo
ACS OMEGA, 2023, 8 (46): : 43759 - 43770
[30] Atomic layer deposition of Bi1-x-yTixSiyOz thin films from alkoxide precursors and water
Min, YS
Cho, YJ
Ko, JH
Bae, EJ
Park, W
Hwang, CS
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (09) : F124 - F128

← 1 2 3 4 5 →