Influence of type-I to Type-II transition by an applied electric field on photoluminescence and carrier transport in GaAs/AlAs type-I short-period superlattices

被引：1
|
作者：
Ohtani, N [1 ]
Mimura, H [1 ]
Hosoda, M [1 ]
Tominaga, K [1 ]
Watanabe, T [1 ]
Fujiwara, K [1 ]
机构：
[1] KYUSHU INST TECHNOL,DEPT ELECT ENGN,TOBATA KU,KITAKYUSHU,FUKUOKA 804,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 2B期
关键词：
Gamma-X-Gamma transfer; Gamma-X mixing; short-period superlattices; type-I to type-II transition; carrier transport; time-of-flight experiments;
D O I：
10.1143/JJAP.35.1302
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the influence of type-I to type-II transition by an applied electric field on photoluminescence and carrier transport by time-of-flight experiments in GaAs/AlAs short-period superlattices. Type-I to type-II transition was confirmed by observing degenerated photoluminescence spectra caused by Gamma-X mixing. The rise time of the time-resolved photocurrent was found to increase by the type-I to type-II transition. This result clearly shows that the tunneling time through type-II alignment is longer than that through type-I alignment. The delayed carrier transport is most likely caused by Gamma-X-Gamma transfer. The results suggest that in type-II superlattices, carriers prefer Gamma-X-Gamma transfer to Gamma-Gamma sequential tunneling.
引用
收藏
页码：1302 / 1305
页数：4
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