共 50 条
- [2] Photocurrent and photoluminescence affected by Γ-x electron transfer in type-I GaAs/AlAs superlattices JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (3B): : 1646 - 1649
- [3] Carrier transport affected by Γ-X transfer in type-I GaAs/AlAs superlattices PHYSICAL REVIEW B, 1998, 58 (11): : 7166 - 7180
- [5] Stark ladder photoluminescence of X states in GaAs/AlAs type-I superlattices JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (3B): : 1884 - 1887
- [7] Carrier transport and photoluminescence affected by Γ-X resonance in GaAs-AlAs type-I superlattices PHYSICA E, 1998, 2 (1-4): : 308 - 312
- [8] Observation of T-X resonances in type-I GaAs/AlAs semiconductor superlattices: Anomaly in photoluminescence Physical Review B: Condensed Matter, 55 (20):
- [9] Observation of Gamma-X resonances in type-I GaAs/AlAs semiconductor superlattices: Anomaly in photoluminescence PHYSICAL REVIEW B, 1997, 55 (20): : 13689 - 13696
- [10] Impurity cyclotron resonance in type-I (GaAs)n/(AlAs)n superlattices MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 64 (02): : 137 - 141