Γ-X electron transfer in GaAs/AlAs type-I superlattices

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Res. Inst. of Elec. Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan ^{[1
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Appl Surf Sci | / 1卷 / 624-628期

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[41] ELECTRON-PHONON INTERACTION IN GAAS/ALAS SUPERLATTICES
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[42] Structural and optical studies of (AlAs)m/(GaAs)n type-I ultra short-period superlattices with fractional monolayer
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[43] OPTICAL ORIENTATION OF EXCITONS INDUCED BY AN ENERGY-LEVEL ANTICROSSING AND BY CROSS-RELAXATION IN TYPE-I GAAS/ALAS SUPERLATTICES
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[44] Avalanche breakdown mechanism originating from Γ-X-Γ transfer in GaAs/AlAs superlattices
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[48] Carrier transport in GaAs/AlAs type-II superlattices under electric field:: Switch from X-X to Γ-Γ transfer
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[49] Negative magnetoresistance and electron localization in GaAs-AlAs superlattices
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[50] Electron localization and anisotropic magnetoconductivity in GaAs-AlAs superlattices
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