High Gain Amplifier with Enhanced Cascoded Compensation

被引:0
|
作者
Lemus-Lopez, Javier [1 ]
Diaz-Sanchez, Alejandro [1 ,4 ]
Muniz-Monter, Carlos [2 ]
Ramirez-Angulo, Jaime [3 ]
Miguel Rocha-Perez, Jose [1 ]
Sanchez-Gaspariano, Luis A. [2 ]
机构
[1] Inst Nacl Astrofis Opt & Electr, Puebla, Mexico
[2] Univ Politecn Puebla, Puebla, Mexico
[3] New Mexico State Univ, Klipsch Sch Elect & Comp Engn, Las Cruces, NM 88003 USA
[4] Inst Tecnol Puebla, Puebla, Mexico
关键词
Gain boosting; frequency compensation; regulated cascode; quasi-floating gate transistors; OPERATIONAL-AMPLIFIERS; CMOS; CIRCUITS;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A two-stage CMOS operational amplifier with both, gain-boosting and indirect current feedback frequency compensation performed by means of regulated cascode amplifiers, is presented. By using quasi-floating-gate transistors (QFGT) the supply requirements, the number of capacitors and the size of the compensation capacitors respect to other Miller schemes are reduced. A prototype was fabricated using a 0.5 mu m technology, resulting, for a load of 45 pF and supply voltage of +/- 1.65 V, in open-loop-gain of 129 dB, 23 MHz of gain-bandwidth product, 600 phase margin, 675 mu W power consumption and 1% settling time of 28 ns.
引用
收藏
页码:504 / 511
页数:8
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