High Gain Amplifier with Enhanced Cascoded Compensation

被引：0

作者：

Lemus-Lopez, Javier ^{[1
]}

Diaz-Sanchez, Alejandro ^{[1
,4
]}

Muniz-Monter, Carlos ^{[2
]}

Ramirez-Angulo, Jaime ^{[3
]}

Miguel Rocha-Perez, Jose ^{[1
]}

Sanchez-Gaspariano, Luis A. ^{[2
]}

机构：

[1] Inst Nacl Astrofis Opt & Electr, Puebla, Mexico

[2] Univ Politecn Puebla, Puebla, Mexico

[3] New Mexico State Univ, Klipsch Sch Elect & Comp Engn, Las Cruces, NM 88003 USA

[4] Inst Tecnol Puebla, Puebla, Mexico

来源：

RADIOENGINEERING | 2014年 / 23卷 / 01期

关键词：

Gain boosting; frequency compensation; regulated cascode; quasi-floating gate transistors; OPERATIONAL-AMPLIFIERS; CMOS; CIRCUITS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A two-stage CMOS operational amplifier with both, gain-boosting and indirect current feedback frequency compensation performed by means of regulated cascode amplifiers, is presented. By using quasi-floating-gate transistors (QFGT) the supply requirements, the number of capacitors and the size of the compensation capacitors respect to other Miller schemes are reduced. A prototype was fabricated using a 0.5 mu m technology, resulting, for a load of 45 pF and supply voltage of +/- 1.65 V, in open-loop-gain of 129 dB, 23 MHz of gain-bandwidth product, 600 phase margin, 675 mu W power consumption and 1% settling time of 28 ns.

引用

页码：504 / 511

页数：8

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