Application of atomic force probing on 90nm DRAM cell failure analysis

被引：0

作者：

Yeh, Yu-Ching ^{[1
]}

Lin, Chia-Lung ^{[1
]}

Chen, Bi-Jen ^{[1
]}

Tseng, Yuan-Wei ^{[1
]}

Russell, Jeremy D. ^{[1
]}

机构：

[1] Inotera Memories Inc, Phys Failure Anal Dept, 667 Fuhsing 3rd Rd, Taoyuan 333, Taiwan

来源：

IPFA 2006: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article presents a novel method to identify marginal faults in DRAM product via atomic force probing. Failing cells which are difficult to be identified by traditional methods were easily localized by current imaging. In addition, current-voltage curves were useful for judging failure root causes.

引用

页码：340 / +

页数：2

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